EFFECT OF SILICON LEVELS AND METHODS OF APPLICATION ON VEGETATIVE GROWTH AND FLOWERING OF ZINNIA (Zinnia elegans L.)

Document Type : Original Article

Author

Botanical Gardens Res. Depart., Hort. Res. Instit. ARC. Giza, Egypt.

Abstract

Silicon (Si) is a beneficial nutrient that improves the tolerance of biotic and abiotic stress of several crop species. Furthermore, during 2015 and 2106 seasons in a private nursery in Kafr El-Sheik Governorate, Egypt, an experimental pots research was performed to study the effects methods of application (soil or foliar application), silicon levels (0,100,200,300,400 and 500ppm) and their combinations on growth and flowering parameters, as well as the chemical composition of Zinnia elegans L. plants.
The obtained results indicated that, vegetative growth parameters (plant height, number of shoots and leaves/plant ,stem thickness, leaf area and total green color (SPAD), shoot fresh and dry weights) and flowering measurements ( number of flowers/plant, flower diameter and vase life)  as well as N. P. K and Si contents of leaves were significantly increased when silicon was applied as soil application as compared with  foliar application method. In addition, adding silicon  at either of  500 or 400ppm caused significant  increases in the previous  aspects.
Thus, it could be recommended to apply silicon at 500 ppm through the soil to give the best results  in terms of growth, flowering and  significantly prolonged  flower vase life.
 

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